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Title: Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate

Abstract

n-3C-SiC/n-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 {mu}m. Varying the growth conditions changes the concentration of various types of defects.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210535
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 47; Journal Issue: 9; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODOLUMINESCENCE; FILMS; LAYERS; SILICON CARBIDES; STACKING FAULTS; SUBLIMATION; SUBSTRATES; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Shustov, D. B., Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Lebedev, S. P., Nelson, D. K., Sitnikova, A. A., and Zamoryanskaya, M. V. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate. United States: N. p., 2013. Web. doi:10.1134/S1063782613090236.
Shustov, D. B., Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Lebedev, S. P., Nelson, D. K., Sitnikova, A. A., & Zamoryanskaya, M. V. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate. United States. https://doi.org/10.1134/S1063782613090236
Shustov, D. B., Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Lebedev, S. P., Nelson, D. K., Sitnikova, A. A., and Zamoryanskaya, M. V. 2013. "Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate". United States. https://doi.org/10.1134/S1063782613090236.
@article{osti_22210535,
title = {Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate},
author = {Shustov, D. B. and Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru and Lebedev, S. P. and Nelson, D. K. and Sitnikova, A. A. and Zamoryanskaya, M. V.},
abstractNote = {n-3C-SiC/n-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 {mu}m. Varying the growth conditions changes the concentration of various types of defects.},
doi = {10.1134/S1063782613090236},
url = {https://www.osti.gov/biblio/22210535}, journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 47,
place = {United States},
year = {Sun Sep 15 00:00:00 EDT 2013},
month = {Sun Sep 15 00:00:00 EDT 2013}
}