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Title: Structural and electronic properties of Si{sub 1-x}Ge{sub x} binary semiconducting alloys under the effect of temperature and pressure

Based on the empirical pseudo-potential method which incorporates compositional disorder as an effective potential, the band structure of Si{sub 1-x}Ge{sub x} alloy are calculated for different alloy composition x. The effect of temperature and pressure on the electronic band structure of the considered alloy has been studied. Monotonic decreasing and increasing functions are obtained for the temperature and pressure dependent form factors respectively. Some physical quantities as band gaps, bowing parameters, and the refractive index of the considered alloy with different Ge concentration and under the effect of temperature and pressure are calculated. The results obtained are found in good agreement with the experimental and published data.
Authors:
;  [1]
  1. Mansoura University, Department of Physics, Faculty of Science (Egypt)
Publication Date:
OSTI Identifier:
22210500
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALLOYS; GERMANIUM COMPOUNDS; PRESSURE DEPENDENCE; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS