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Title: The analysis of leakage current in MIS Au/SiO{sub 2}/n-GaAs at room temperature

The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO{sub 2}/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I-V) were performed at room temperature. The using of leakage current values in SiO{sub 2} at electric fields of 1.46-3.53 MV/cm, ln(J/E) vs. {radical}E graph showed good linearity. Rom this plot, dielectric constant of SiO{sub 2} was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO{sub 2} dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06-0.73 and 0.79-1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.
Authors:
 [1] ;  [2]
  1. Cankiri Karatekin University, Department of Physics, Faculty of Science (Turkey)
  2. Gazi University, Department of Physics, Faculty of Science (Turkey)
Publication Date:
OSTI Identifier:
22210497
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; EMISSION; GALLIUM ARSENIDES; LEAKAGE CURRENT; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SILICA; SILICON OXIDES