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Title: Synchrotron study of the formation of nanoclusters in Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanostructures

Journal Article · · Semiconductors
; ;  [1]; ; ;  [2];  [1]
  1. Voronezh State University (Russian Federation)
  2. Nizhni Novgorod State University (Russian Federation)

Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.

OSTI ID:
22210495
Journal Information:
Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English