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Title: Ultra-low density InAs quantum dots

We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10{sup 7} cm{sup -2} without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3-1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10{sup 7}-10{sup 8} cm{sup -2}, exhibiting bright photoluminescence.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. St. Petersburg Academic University Russian Academy of Sciences (Russian Federation)
  2. Ioffe Physical Technical Institute Russian Academy of Sciences (Russian Federation)
  3. Delft University of Technology, Quantum Transport, Kavli Institute of Nanoscience (Netherlands)
Publication Date:
OSTI Identifier:
22210494
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; DENSITY; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; STRAINS; SUBSTRATES; SURFACE TREATMENTS; TRANSMISSION ELECTRON MICROSCOPY