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Title: Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique

The temperature dependencies of the luminescence spectra of 5-nm-diameter CdSe semiconductor nanocrystals synthesized by colloidal-chemistry methods are investigated. The two bands observed in these spectra around 2.01 and 1.37 eV correspond to band-to-band transitions and luminescence of defect states, respectively. A model explaining the temperature behavior of the luminescence band intensities both upon cooling and heating is put forward. A new modification of spectrally resolved thermostimulated luminescence technique making it possible to determine the activation energies and the character of traps responsible for the temperature dependence of the luminescence intensities is suggested. This technique is used to obtain the activation energies of the emission and capture of electrons at traps (190 and 205 meV, respectively) and to determine the depth of the electron level (57 meV) responsible for luminescence in the 1.37-eV region.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
  2. Moscow State University, Faculty of Materials Science (Russian Federation)
  3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210493
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ACTIVATION ENERGY; CADMIUM SELENIDES; ELECTRONS; LUMINESCENCE; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE