skip to main content

Title: Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.
Authors:
 [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210492
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DOPED MATERIALS; ERBIUM; MOLECULAR BEAM EPITAXY; OXYGEN; PHOTOLUMINESCENCE; SILICON