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Title: The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells

The role of electron-electron interaction in the process of electron capture to a deep quantum well is investigated. Using two-level and three-level quantum wells as examples, the basic electron-capture mechanisms, i.e., the interaction with optical phonons and the Coulomb electron-electron interaction, are considered, and the corresponding capture probabilities and electron lifetimes are calculated. The effect of Auger recombination on the charge-carrier distribution in a quantum well is also taken into account. With this taken into consideration, a set of rate equations is solved for a nonsteady-state mode, and the time dependences of the electron concentration at the ground energy level in the quantum well are found. The contributions of each of the recombination processes under consideration are shown.
Authors:
;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210491
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; ELECTRON CAPTURE; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON COUPLING; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; ENERGY LEVELS; QUANTUM WELLS; REACTION KINETICS; TIME DEPENDENCE