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Title: Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films, the relaxation times are 1 ns and 465 ps and the diffusion coefficients are 0.54 and 0.83 cm{sup 2} s{sup -1}. It is established that, as the pulse intensity is increased, the decay time of the induced-grating signal shortens.
Authors:
 [1] ; ; ;  [2] ;  [1] ;  [3] ;  [2] ;  [3]
  1. Kazan State Power Engineering University (Russian Federation)
  2. Russian Academy of Sciences, Zavoisky Physical Technical Institute, Kazan Research Center (Russian Federation)
  3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210489
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION; FILMS; HYDROGENATION; PULSES; SIGNALS; SILICON; SPECTROSCOPY