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Title: Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.
Authors:
; ; ; ; ;  [1]
  1. Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22210487
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON BEAM INJECTION; ELECTRONS; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM WELLS; TEMPERATURE DEPENDENCE