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Title: Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Microring cavities (diameter D = 2.7-7 {mu}m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 {mu}m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 {mu}m.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2] ; ;  [1] ;  [3] ;  [1] ; ; ;  [4] ;  [5] ;  [6]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  3. St. Petersburg Polytechnic University (Russian Federation)
  4. University of Athens (Greece)
  5. University of Notre Dame (United States)
  6. Innolume GmbH (Germany)
Publication Date:
OSTI Identifier:
22210486
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; LANTHANUM SELENIDES; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; QUANTUM DOTS