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Title: Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.
Authors:
; ; ; ;  [1]
  1. Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
Publication Date:
OSTI Identifier:
22210485
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; ELECTRONS; EXCITED STATES; GROUND STATES; LANTHANUM SELENIDES; LASERS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE