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Title: Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

The effect of an arsenic flux on the growth rate of self-catalytic (Ga,Mn)As nanowire crystals is studied. It is shown that, at low arsenic fluxes, nanowire-crystal growth is limited by the crystallization rate of the material below the droplet. However, at high arsenic fluxes, the growth kinetics are controlled by gallium transport into the droplet. It is experimentally demonstrated that, at low arsenic fluxes, the dependence of the nanowire length on the nanowire diameter is a steadily increasing function adequately described by Givargizov-Chernov's model. At the same time, a steadily decreasing diffusion dependence is observed at high arsenic fluxes.
Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
Publication Date:
OSTI Identifier:
22210482
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; CRYSTALLIZATION; CRYSTALS; DROPLETS; GALLIUM; MOLECULAR BEAM EPITAXY