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Title: Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

The effects of tunneling between two parallel two-dimensional electron gases in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to B{sub Double-Vertical-Line} = 9.0 T) in the temperature range T = 1.8-70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime {tau}{sub q}{sup -}(T) is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, {rho}{sub xx}(B{sub Double-Vertical-Line }, T). The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime {tau}{sub q}{sup -}(T) at T > 0.1T{sub F} cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
  2. Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210450
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC FIELDS; QUANTUM WELLS; RELAXATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TUNNEL EFFECT