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Title: Pseudomorphic GeSn/Ge (001) heterostructures

The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.
Authors:
 [1] ;  [2] ;  [1]
  1. Max Planck Institute of Microstructure Physics (Germany)
  2. Martin Luther University Halle-Wittenberg, ZIK SiLi-nano (Germany)
Publication Date:
OSTI Identifier:
22210449
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; EV RANGE; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SIMULATION; SPECTROSCOPY; SUBSTRATES; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY