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Title: Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [1] ;  [3]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Belarussian State University (Belarus)
  3. Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
22210445
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; NITROGEN; POWER DENSITY; QUANTUM WELLS; SEMICONDUCTOR LASERS; WAVEGUIDES; WAVELENGTHS