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Title: Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas

Cyclotron resonance and magnetic transport in InP/InGaAs/InP heterostructures with axially symmetric quantum wells are studied experimentally at 4.2 K. An increase in the cyclotron mass at the Fermi level from 0.047m{sub 0} to 0.057m{sub 0} with an increase in the concentration of two-dimensional electrons from 5.5 Multiplication-Sign 10{sup 11} to 2.1 Multiplication-Sign 10{sup 12} cm{sup -3} is shown. The values of the Rashba spin splitting at the Fermi level are determined from Fourier analysis of the beats of Shubnikov-de Haas oscillations. The obtained experimental data are compared with the theoretical results of self-consistent calculations of the energy spectrum and cyclotron masses of 2D electrons performed using the eight-band k {center_dot} p Hamiltonian.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Lobachevskyi State University, Physical-Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210442
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AXIAL SYMMETRY; CYCLOTRON RESONANCE; EFFECTIVE MASS; ELECTRON GAS; ELECTRONS; ENERGY SPECTRA; FERMI LEVEL; FOURIER ANALYSIS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; QUANTUM WELLS; SPIN