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Title: Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals

The effect of spin-orbit interaction on the structure of the ground state in the conduction band of spherical silicon nanocrystals is theoretically studied using the envelope-function approximation and the k {center_dot} p method. It is shown that the arising weak spin-orbit coupling of the conduction- and valence bands leads to specific asymmetric hybridization of the s- and p-type envelope functions with opposite spin orientations caused by the anisotropy of spin mixing in the silicon conduction band. As a result, the wave functions of the ground-state transform which is accompanied by an insignificant decrease in its energy. In this case, the spin-mixing parameter in nanocrystals depends strongly on their size due to the quantum-confinement effect.
Authors:
; ;  [1]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22210437
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; APPROXIMATIONS; GROUND STATES; L-S COUPLING; NANOSTRUCTURES; SILICON; SPIN ORIENTATION; WAVE FUNCTIONS