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Title: Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals

Journal Article · · Semiconductors
;  [1]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)

The effect of spin-orbit interaction on the structure of the ground state in the conduction band of spherical silicon nanocrystals is theoretically studied using the envelope-function approximation and the k {center_dot} p method. It is shown that the arising weak spin-orbit coupling of the conduction- and valence bands leads to specific asymmetric hybridization of the s- and p-type envelope functions with opposite spin orientations caused by the anisotropy of spin mixing in the silicon conduction band. As a result, the wave functions of the ground-state transform which is accompanied by an insignificant decrease in its energy. In this case, the spin-mixing parameter in nanocrystals depends strongly on their size due to the quantum-confinement effect.

OSTI ID:
22210437
Journal Information:
Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English