Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613110237· OSTI ID:22210436

Vorobjev, L. E.; Firsov, D. A.; Mashko, M. O.; Balagula, R. M. ^[1]; Belenky, G.; Shterengas, L.; Kipshidze, G. ^[2]

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1. Saint Petersburg State Polytechnical University (Russian Federation)
2. State University of New York at Stony Brook, Department of Electrical and Computer Engineering (United States)

The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.

• OSTI ID: 22210436
• Journal Information: Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
INJECTION
LASERS
LUMINESCENCE
QUANTUM WELLS