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Title: Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Saint Petersburg State Polytechnical University (Russian Federation)
  2. State University of New York at Stony Brook, Department of Electrical and Computer Engineering (United States)
Publication Date:
OSTI Identifier:
22210436
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; INJECTION; LASERS; LUMINESCENCE; QUANTUM WELLS