Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.
- OSTI ID:
- 22210433
- Journal Information:
- Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate
Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
Consideration of spontaneous polarization in the problem of NH-SiC/3C-SiC/NH-SiC heterostructures formed by cubic (3C) and hexagonal (NH) silicon carbide polytypes
Journal Article
·
Sun Sep 15 00:00:00 EDT 2013
· Semiconductors
·
OSTI ID:22210433
+2 more
Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
Journal Article
·
Sun May 01 00:00:00 EDT 1994
· IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:22210433
+3 more
Consideration of spontaneous polarization in the problem of NH-SiC/3C-SiC/NH-SiC heterostructures formed by cubic (3C) and hexagonal (NH) silicon carbide polytypes
Journal Article
·
Wed Oct 15 00:00:00 EDT 2008
· Semiconductors
·
OSTI ID:22210433