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Title: Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

Abstract

Zn{sub 1-x}Mg{sub x}O epitaxial films with Mg concentrations 0{<=}x{<=}0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x{<=}0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

Authors:
 [1]; ;  [1]; ;  [2];  [3]
  1. Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)
  2. Universitaet der Bundeswehr Muenchen, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, 85577 Neubiberg (Germany)
  3. I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)
Publication Date:
OSTI Identifier:
22163053
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ENERGY GAP; FILMS; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; LATTICE PARAMETERS; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OXYGEN COMPOUNDS; PHOTOLUMINESCENCE; PLASMA; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; ULTRAVIOLET SPECTRA; VAPOR PHASE EPITAXY; ZINC COMPOUNDS

Citation Formats

Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, and Eickhoff, Martin. Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. United States: N. p., 2013. Web. doi:10.1063/1.4811693.
Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, & Eickhoff, Martin. Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. United States. https://doi.org/10.1063/1.4811693
Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, and Eickhoff, Martin. 2013. "Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire". United States. https://doi.org/10.1063/1.4811693.
@article{osti_22163053,
title = {Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire},
author = {Laumer, Bernhard and I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen and Schuster, Fabian and Stutzmann, Martin and Bergmaier, Andreas and Dollinger, Guenther and Eickhoff, Martin},
abstractNote = {Zn{sub 1-x}Mg{sub x}O epitaxial films with Mg concentrations 0{<=}x{<=}0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x{<=}0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.},
doi = {10.1063/1.4811693},
url = {https://www.osti.gov/biblio/22163053}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 113,
place = {United States},
year = {Fri Jun 21 00:00:00 EDT 2013},
month = {Fri Jun 21 00:00:00 EDT 2013}
}