Reduced leakage in epitaxial BiFeO{sub 3} films following oxygen radio frequency plasma treatment

Journal Article · Fri Jun 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4808461· OSTI ID:22162993

Kothari, Deepti ^[1]; Upadhyay, Sanjay K.; Raghavendra Reddy, V. ^[2]; Jariwala, C.; Raole, P. M. ^[1]

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1. Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)
2. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 017 (India)

Epitaxial BiFeO{sub 3} (BFO) films were deposited using pulsed laser deposition method. The prepared films were characterized using x-ray diffraction, x-ray reflectivity, ferroelectric loop tracer, and leakage current measurements before and after oxygen plasma treatment. The leakage current of the films, a crucial parameter in device applications, is observed to be reduced by two orders of magnitude with oxygen plasma treatment at room temperature. P-E hysteresis loops were observed in oxygen plasma treated BFO films. The observed results indicate the usefulness of oxygen radio frequency plasma treatment (RF 13.56 MHz), which is an effective and low temperature processing technique, in such lossy ferroelectric thin films.

• OSTI ID: 22162993
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
ENERGY BEAM DEPOSITION
EPITAXY
EQUIPMENT
FERRITES
FERROELECTRIC MATERIALS
HYSTERESIS
LASER RADIATION
LAYERS
LEAKAGE CURRENT
OXYGEN
PLASMA
PULSED IRRADIATION
RADIOWAVE RADIATION
REFLECTION
REFLECTIVITY
THIN FILMS
X RADIATION
X-RAY DIFFRACTION