Transient and steady-state dark current mechanisms in amorphous selenium avalanche radiation detectors
- Department of Electrical and Computer Engineering, Concordia University, 1455 Blvd. de Maisonneuve West, Montreal, Quebec H3G 1M8 (Canada)
A theoretical model for describing bias-dependent transient and steady-state behaviors of dark current in amorphous selenium (a-Se) avalanche detector structures has been developed. The analytical model considers bulk thermal generation current from mid-gap sates, transient carrier depletion, and carrier injection from the electrodes incorporating avalanche multiplication. The proposed physics-based dark current model is compared with the published experimental results on three potential a-Se avalanche detector structures. The steady-state dark current is the minimum for the structures that have effective blocking layers for both holes and electrons. The transient decay time to reach a plateau decreases considerably with increasing electric field.
- OSTI ID:
- 22162849
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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