Manipulation of the graphene surface potential by ion irradiation
- Fakultaet fuer Physik and CeNIDE, Universitaet Duisburg-Essen, D-47048 Duisburg (Germany)
- CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France)
We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E{sub kin}=92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on silicon carbide. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to Almost-Equal-To 0.01 {mu}m{sup 2} per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by Almost-Equal-To 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 Multiplication-Sign 10{sup 12} holes/cm{sup 2}. This doping effect persists even after heating the irradiated samples to 500 Degree-Sign C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a way to efficiently manipulate the charge carrier concentration of graphene.
- OSTI ID:
- 22162847
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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