Non-conducting interfaces of LaAlO{sub 3}/SrTiO{sub 3} produced in sputter deposition: The role of stoichiometry
- Kamerlingh Onnes Laboratorium, Leiden University, Leiden (Netherlands)
- National Centre for High Resolution Microscopy, Kavli Institute for Nanoscience, Delft Technical University, Lorentzweg 1, 2628 CJ Delft (Netherlands)
- Faculty of Science and Technology and MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
We have investigated the properties of interfaces between LaAlO{sub 3} films grown on SrTiO{sub 3} substrates singly terminated by TiO{sub 2}. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.
- OSTI ID:
- 22162807
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 12; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
ATMOSPHERES
ENERGY BEAM DEPOSITION
FILMS
INTERFACES
LANTHANUM COMPOUNDS
LASER RADIATION
MIXING
OXYGEN
PULSED IRRADIATION
SPUTTERING
STOICHIOMETRY
STRONTIUM TITANATES
SUBSTRATES
SURFACES
TITANIUM OXIDES
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
X RADIATION