skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Self healing of defected graphene

Abstract

For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective.

Authors:
; ; ; ;  [1]; ;  [2]
  1. School of Physics, Peking University, Beijing 100871 (China)
  2. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096 (China)
Publication Date:
OSTI Identifier:
22162785
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; ARGON; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL DEFECTS; DAMAGE; GRAPHENE; PHOTOEMISSION; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RECOMBINATION; REPAIR; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Chen, Jianhui, Shi, Tuwan, Cai, Tuocheng, Wu, Xiaosong, Yu, Dapeng, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, Xu, Tao, and Sun, Litao. Self healing of defected graphene. United States: N. p., 2013. Web. doi:10.1063/1.4795292.
Chen, Jianhui, Shi, Tuwan, Cai, Tuocheng, Wu, Xiaosong, Yu, Dapeng, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, Xu, Tao, & Sun, Litao. Self healing of defected graphene. United States. https://doi.org/10.1063/1.4795292
Chen, Jianhui, Shi, Tuwan, Cai, Tuocheng, Wu, Xiaosong, Yu, Dapeng, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, Xu, Tao, and Sun, Litao. 2013. "Self healing of defected graphene". United States. https://doi.org/10.1063/1.4795292.
@article{osti_22162785,
title = {Self healing of defected graphene},
author = {Chen, Jianhui and Shi, Tuwan and Cai, Tuocheng and Wu, Xiaosong and Yu, Dapeng and State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 and Xu, Tao and Sun, Litao},
abstractNote = {For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective.},
doi = {10.1063/1.4795292},
url = {https://www.osti.gov/biblio/22162785}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 102,
place = {United States},
year = {Mon Mar 11 00:00:00 EDT 2013},
month = {Mon Mar 11 00:00:00 EDT 2013}
}