skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

Abstract

(1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

Authors:
; ; ; ;  [1]
  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)
Publication Date:
OSTI Identifier:
22162779
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNIHILATION; CHEMICAL VAPOR DEPOSITION; COALESCENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; DENSITY; DISLOCATIONS; GALLIUM NITRIDES; NANOSTRUCTURES; REDUCTION; SAPPHIRE; SEMICONDUCTOR MATERIALS; STACKING FAULTS; SUBSTRATES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Bai, J., Gong, Y., Xing, K., Yu, X., and Wang, T. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. United States: N. p., 2013. Web. doi:10.1063/1.4795619.
Bai, J., Gong, Y., Xing, K., Yu, X., & Wang, T. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. United States. https://doi.org/10.1063/1.4795619
Bai, J., Gong, Y., Xing, K., Yu, X., and Wang, T. 2013. "Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates". United States. https://doi.org/10.1063/1.4795619.
@article{osti_22162779,
title = {Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates},
author = {Bai, J. and Gong, Y. and Xing, K. and Yu, X. and Wang, T.},
abstractNote = {(1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.},
doi = {10.1063/1.4795619},
url = {https://www.osti.gov/biblio/22162779}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 102,
place = {United States},
year = {Mon Mar 11 00:00:00 EDT 2013},
month = {Mon Mar 11 00:00:00 EDT 2013}
}