Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy

Journal Article · Mon Feb 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4793430· OSTI ID:22162753

Monirul Islam, Muhammad; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka ^[1]

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1. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8904 (Japan)

Defects in undoped GaInNAsSb thin film (i-GaInNAsSb) were investigated by junction-capacitance technique using admittance and transient photocapacitance (TPC) spectroscopy. An electron trap D2 was identified at 0.34 eV below the conduction band (E{sub C}) of i-GaInNAsSb using admittance spectroscopy. Optical transition of valance band (E{sub V}) electrons to a localized state OH1 (E{sub V} + 0.75 eV) was manifested in negative TPC signal. Combined activation energy of OH1 and D2 defect corresponds to the band-gap of i-GaInNAsSb, suggesting that OH1/D2 acts as an efficient recombination center. TPC signal at {approx}1.59 eV above E{sub V} was attributed to the nitrogen-induced localized state in GaInNAsSb.

• OSTI ID: 22162753
• Journal Information: Applied Physics Letters, Vol. 102, Issue 7; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CAPACITANCE
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRONS
EV RANGE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
RECOMBINATION
SPECTROSCOPY
THIN FILMS
TRANSIENTS
TRAPS