Homogeneous and stable p-type doping of graphene by MeV electron beam-stimulated hybridization with ZnO thin films

Journal Article · Mon Feb 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4790161· OSTI ID:22162730

Song, Wooseok; Kim, Yooseok; Hwan Kim, Sung; Youn Kim, Soo; Cha, Myoung-Jun; Song, Inkyung; Jeon, Cheolho ^[1]; Sung Jung, Dae ^[2]; Lim, Taekyung; Lee, Sumi; Ju, Sanghyun ^[3]; Chel Choi, Won ^[4]; Wook Jung, Min; An, Ki-Seok ^[5]; Park, Chong-Yun ^[1]

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1. BK21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
2. Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
3. Department of Physics, Kyonggi University, Suwon 443-760 (Korea, Republic of)
4. Electronic Material Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of)
5. Thin Film Materials Research Group, Korea Research Institute of Chemical Technology (KRICT), Yuseong P.O. Box 107, Daejeon 305-600 (Korea, Republic of)

In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.

• OSTI ID: 22162730
• Journal Information: Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE EXCHANGE
DISSOCIATION
ELECTRON BEAMS
FABRICATION
GRAPHENE
IRRADIATION
MEV RANGE
NANOSTRUCTURES
OXIDATION
PHYSICAL RADIATION EFFECTS
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SURFACES
THICKNESS
THIN FILMS
ZINC OXIDES