An X-ray absorption spectroscopic study of the metal site preference in Al{sub 1-x}Ga{sub x}FeO{sub 3}
- Department of Chemistry, University of Saskatchewan, Saskatoon, Saskatchewan, S7N 5C9 (Canada)
Magnetoelectric materials have potential for being introduced into next generation technologies, especially memory devices. The AFeO{sub 3} (Pna2{sub 1}; A=Al, Ga) system has received attention to better understand the origins of magnetoelectric coupling. The magnetoelectric properties this system exhibits depend on the amount of anti-site disorder present, which is affected by the composition and the method of synthesis. In this study, Al{sub 1-x}Ga{sub x}FeO{sub 3} was synthesized by the ceramic method and studied by X-ray absorption spectroscopy. Al L{sub 2,3}-, Ga K-, and Fe K-edge spectra were collected to examine how the average metal coordination number changes with composition. Examination of XANES spectra from Al{sub 1-x}Ga{sub x}FeO{sub 3} indicate that with increasing Ga content, Al increasingly occupies octahedral sites while Ga displays a preference for occupying the tetrahedral site. The Fe K-edge spectra indicate that more Fe is present in the tetrahedral site in AlFeO{sub 3} than in GaFeO{sub 3}, implying more anti-site disorder is present in AlFeO{sub 3}. - Graphical abstract: Al{sub 1-x}Ga{sub x}FeO{sub 3} has been investigated by XANES. Through examination of Al L{sub 2,3}-, Ga K-, and Fe K-edge XANES spectra, it was found that more anti-site disorder of the Fe atoms is present in AlFeO{sub 3} compared to in GaFeO{sub 3}. Highlights: Black-Right-Pointing-Pointer Al{sub 1-x}Ga{sub x}FeO{sub 3} was investigated by X-ray absorption spectroscopy. Black-Right-Pointing-Pointer Ga prefers to occupy the tetrahedral site in Al{sub 1-x}Ga{sub x}FeO{sub 3}. Black-Right-Pointing-Pointer Fe prefers to occupy the octahedral sites in Al{sub 1-x}Ga{sub x}FeO{sub 3} as x increases. Black-Right-Pointing-Pointer More anti-site disorder is present in AlFeO{sub 3} compared to in GaFeO{sub 3.}.
- OSTI ID:
- 22131169
- Journal Information:
- Journal of Solid State Chemistry, Vol. 197; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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