Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors
- National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
A method for determination of the degree of compensation k = N{sub a}/N{sub d} for shallow impurities in n-Si crystals with a nondegenerate electron gas is suggested. Data facilitating practical determination of the degree of compensation are given.
- OSTI ID:
- 22126519
- Journal Information:
- Semiconductors, Vol. 47, Issue 6; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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