MOS solar cells with oxides deposited by sol-gel spin-coating techniques

Huang, Chia-Hong; Chang, Chung-Cheng; Tsai, Jung-Hui

doi:10.1134/S1063782613060092

Title: MOS solar cells with oxides deposited by sol-gel spin-coating techniques

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Abstract

The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO{sub 2}) deposited by spin coating are proposed in this study. The sol-gel derived SiO{sub 2} layer is prepared at low temperature of 450 Degree-Sign C. Such processes are simple and low-cost. These techniques are, therefore, useful for largescale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current (I{sub sc}) of 2.48 mA, the open-circuit voltage (V{sub os}) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency ({eta}%) of 2.01% were obtained by means of the current-voltage (I-V) measurements under AM 1.5 (100 mW/cm{sup 2}) irradiance at 25 Degree-Sign C in the MOS solar cell with sol-gel derived SiO{sub 2}.

Authors:

Huang, Chia-Hong ^[1]; Chang, Chung-Cheng ^[2]; Tsai, Jung-Hui ^[1]

National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China)
National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)

Publication Date:: Sat Jun 15 00:00:00 EDT 2013

OSTI Identifier:: 22126505

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 47; Journal Issue: 6; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; DEPOSITS; ENERGY CONVERSION; FILL FACTORS; LAYERS; MANUFACTURING; MOS SOLAR CELLS; QUANTUM EFFICIENCY; RADIANT FLUX DENSITY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SOL-GEL PROCESS; SPIN-ON COATING; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats


                    Huang, Chia-Hong, Chang, Chung-Cheng, and Tsai, Jung-Hui. MOS solar cells with oxides deposited by sol-gel spin-coating techniques.  United States: N. p., 2013. 
        Web.  doi:10.1134/S1063782613060092.

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                    Huang, Chia-Hong, Chang, Chung-Cheng, & Tsai, Jung-Hui. MOS solar cells with oxides deposited by sol-gel spin-coating techniques.  United States.  https://doi.org/10.1134/S1063782613060092

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                    Huang, Chia-Hong, Chang, Chung-Cheng, and Tsai, Jung-Hui. 2013.  
        "MOS solar cells with oxides deposited by sol-gel spin-coating techniques".  United States.  https://doi.org/10.1134/S1063782613060092.

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@article{osti_22126505,

  title        = {MOS solar cells with oxides deposited by sol-gel spin-coating techniques},

  author       = {Huang, Chia-Hong and Chang, Chung-Cheng and Tsai, Jung-Hui},

  abstractNote = {The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO{sub 2}) deposited by spin coating are proposed in this study. The sol-gel derived SiO{sub 2} layer is prepared at low temperature of 450 Degree-Sign C. Such processes are simple and low-cost. These techniques are, therefore, useful for largescale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current (I{sub sc}) of 2.48 mA, the open-circuit voltage (V{sub os}) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency ({eta}%) of 2.01% were obtained by means of the current-voltage (I-V) measurements under AM 1.5 (100 mW/cm{sup 2}) irradiance at 25 Degree-Sign C in the MOS solar cell with sol-gel derived SiO{sub 2}.},

  doi          = {10.1134/S1063782613060092},

  url          = {https://www.osti.gov/biblio/22126505},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 6,

  volume       = 47,

  place        = {United States},

  year         = {Sat Jun 15 00:00:00 EDT 2013},

  month        = {Sat Jun 15 00:00:00 EDT 2013}

}

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