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Title: Tuning the formation of p-type defects by peroxidation of CuAlO{sub 2} films

p-type conduction of CuAlO{sub 2} thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (V{sub Cu}), and interstitial oxygen (O{sub i}) was established. It is shown that peroxidation of CuAlO{sub 2} films may lead to the increased formation probability of acceptors (V{sub Cu} and O{sub i}), thus, increasing the hole concentration. The dependence of the V{sub Cu} density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO{sub 2}. Understanding the defect-related p-type conductivity of CuAlO{sub 2} is essential for designing optoelectronic devices and improving their performance.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
  2. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)
Publication Date:
OSTI Identifier:
22122840
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CONCENTRATION RATIO; COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTALS; DENSITY; DEPOSITION; DESIGN; INTERSTITIALS; OXYGEN; PERFORMANCE; SEMICONDUCTOR MATERIALS; SPECTROMETERS; SPUTTERING; THIN FILMS; VACANCIES; X RADIATION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY