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Title: Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. ICube, Strasbourg University-CNRS, 23 rue du Loess BP20, 67037 Strasbourg Cedex 2 (France)
  2. IPCMS, Strasbourg University-CNRS, 23 rue du Loess BP43, 67034 Strasbourg Cedex 2 (France)
  3. IJL, CNRS, Campus Victor Grignard BP 70239, 54506 Vandoeuvre-les-Nancy Cedex (France)
Publication Date:
OSTI Identifier:
22122839
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITE MATERIALS; DEPOSITS; DETECTION; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON-RESONANCE; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; NANOSTRUCTURES; NITROGEN; PHOTOLUMINESCENCE; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY