Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon
- School of Science, Nanjing University of Science and Technology, Nanjing 210094 (China)
Thermal process of 1064 nm millisecond pulsed Nd:YAG laser irradiated silicon was time-resolved temperature measured by an infrared radiation pyrometer, temperature evolutions of the spot center for wide range of laser energy densities were presented. The waveforms of temperature evolution curves contained much information about phase change, melting, solidification and vaporization. An axisymmetric numerical model was established for millisecond laser heating silicon. The transient temperature fields were obtained by using the finite element method. The numerical results of temperature evolutions of the spot center are in good agreement with the experimental results. Furthermore, the axial temperature distributions of the numerical results give a better understanding of the waveforms in the experimental results. The melting threshold, vaporizing threshold, melting duration, and melting depth were better identified by analyzing two kinds of results.
- OSTI ID:
- 22122833
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 3; Other Information: (c) 2013 Copyright-Sign 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AXIAL SYMMETRY
COMPUTERIZED SIMULATION
ENERGY DENSITY
FINITE ELEMENT METHOD
INFRARED RADIATION
IRRADIATION
LASER MATERIALS
LASER-RADIATION HEATING
MELTING
NEODYMIUM LASERS
PYROMETERS
SEMICONDUCTOR MATERIALS
SILICON
SOLIDIFICATION
TEMPERATURE DISTRIBUTION
TEMPERATURE MEASUREMENT
TIME RESOLUTION
WAVE FORMS