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Title: Evidence of two sensitization processes of Nd{sup 3+} ions in Nd-doped SiO{sub x} films

This paper aims to study the excitation mechanism of Nd{sup 3+} ions in Nd-SiO{sub x} (x < 2) films. The films were deposited by magnetron co-sputtering followed by a rapid thermal annealing at temperature T{sub A} ranging from 600 to 1200 Degree-Sign C. Two different photoluminescence (PL) behaviors have been evidenced in SiO{sub x} layers depending on the annealing temperature. For low T{sub A} (T{sub A} < 1000 Degree-Sign C), the recorded visible PL originates from defects energy levels while for high T{sub A} (T{sub A} > 1000 Degree-Sign C), the visible emission emanates from recombination of excitons in Si nanoclusters. When doped with Nd{sup 3+} ions, the visible PL behaviors of Nd-SiO{sub x} films follow the same trends. Nd{sup 3+} PL was investigated and its decay rate was analyzed in detail. Depending on the annealing conditions, two types of sensitizers have been evidenced. Finally, maximum Nd{sup 3+} PL emission has been achieved at around 750 Degree-Sign C when the number of Nd{sup 3+} ions excited by the two types of sensitizers reaches a maximum.
Authors:
; ; ;  [1]
  1. CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN, Ensicaen, 6 Bd Mal Juin, 14050 Caen Cedex 4 (France)
Publication Date:
OSTI Identifier:
22122832
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL DEFECTS; DEPOSITION; DEPOSITS; DOPED MATERIALS; EXCITATION; EXCITONS; LAYERS; MAGNETRONS; NANOSTRUCTURES; NEODYMIUM; NEODYMIUM ADDITIONS; PHOTOLUMINESCENCE; RECOMBINATION; SENSITIZERS; SILICON OXIDES; SPUTTERING; THIN FILMS