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Title: Comment on 'Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors'[Appl. Phys. Lett. 100, 063306 (2012)]

No abstract prepared.
Authors:
 [1]
  1. Materials R and D Center, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do 446-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22122831
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRONS; EQUIPMENT; FIELD EFFECT TRANSISTORS; HOLES; INSTABILITY; ORGANIC SEMICONDUCTORS; PENTACENE; RADIATION EFFECTS; TRAPPING; TRAPS