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Title: Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC

We investigated the Schottky barrier of Pt/4H-SiC contact as a function of 4H-SiC surface properties which effectively controlled by electronic cyclotron resonance hydrogen plasma pretreatment for different periods and annealing. It is found that the effective barrier height monotonically increases with decreasing the degree of Fermi level pinning. Electrically homogeneous contacts are observed when the Fermi level (FL) is 'pinned (Bardeen limit)' and 'free-pinned (Schottky limit).' However, a partial pinning of FL leads to Gaussian distribution of inhomogeneous barrier height. These results could be correlated with changes in the magnitude and spatial distribution of surface state density after different pretreatments.
Authors:
; ;  [1] ;  [2]
  1. School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)
  2. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024 (China)
Publication Date:
OSTI Identifier:
22122826
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CYCLOTRON RESONANCE; DENSITY; FERMI LEVEL; GAUSS FUNCTION; N-TYPE CONDUCTORS; PLASMA; PLATINUM; RF SYSTEMS; SCHOTTKY BARRIER DIODES; SILICON CARBIDES; SPATIAL DISTRIBUTION; SURFACE PROPERTIES; SURFACES