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Title: Determination of effective work function of Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} and Pt films on ZrO{sub x} using terraced-oxide method

We have determined the effective work function ({Phi}{sub m,eff}) of thin-film sputter-deposited Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) on atomic-layer-deposited ZrO{sub x}. Pt/PCMO/ZrO{sub x}/SiO{sub 2}/Si and Pt/ZrO{sub x}/SiO{sub 2}/Si metal-oxide-semiconductor (MOS) capacitors were fabricated. The {Phi}{sub m,eff} were extracted from capacitance-voltage curves of the MOS capacitors by using flat-band voltage versus effective-oxide-thickness plots. PCMO was crystallized using a high-temperature anneal step and crystallinity was confirmed by x-ray diffraction and transmission electron microscopy. {Phi}{sub m,eff} of polycrystalline PCMO and Pt on ZrO{sub x} was determined to be 5.43 eV and 5.40 eV, respectively. The significantly higher {Phi}{sub m,eff} of PCMO is attributed to the presence of oxygen-rich PCMO(002)/ZrO{sub x} interfaces as indicated by our density-functional-theory calculations.
Authors:
; ;  [1]
  1. Micron Technology, Inc., Boise, Idaho 83707 (United States)
Publication Date:
OSTI Identifier:
22122824
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CALCIUM COMPOUNDS; CAPACITANCE; CRYSTALLIZATION; DENSITY FUNCTIONAL METHOD; INTERFACES; LAYERS; MANGANATES; PLATINUM; POLYCRYSTALS; PRASEODYMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WORK FUNCTIONS; X-RAY DIFFRACTION; ZIRCONIUM OXIDES