Low-damage high-throughput grazing-angle sputter deposition on graphene

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4813911· OSTI ID:22122820

Chen, C. -T.; Gajek, M.; Raoux, S. ^[1]; Casu, E. A. ^[1]; Politecnico di Torino, Turin 10129 ^[2]

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1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
2. Italy

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

• OSTI ID: 22122820
• Journal Information: Applied Physics Letters, Vol. 103, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CONFIGURATION
DAMAGE
DEPOSITION
DIELECTRIC MATERIALS
ELECTRON BEAMS
EQUIPMENT
EVAPORATION
FILMS
GRAPHENE
METALS
MICROELECTRONICS
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SPUTTERING
TUNNEL EFFECT