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Title: Low-damage high-throughput grazing-angle sputter deposition on graphene

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  2. (Italy)
Publication Date:
OSTI Identifier:
22122820
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CONFIGURATION; DAMAGE; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON BEAMS; EQUIPMENT; EVAPORATION; FILMS; GRAPHENE; METALS; MICROELECTRONICS; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TUNNEL EFFECT