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Title: Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (111) and (111) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.
Authors:
 [1] ; ;  [2] ;  [3] ;  [4]
  1. Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047 (Japan)
  2. Materials Science and Technology Division, Oak Ridge National Laboratory, Tennessee 37831-6138 (United States)
  3. (United States)
  4. Department of Nuclear Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22122819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; CRYSTALS; DAMAGE; ELECTRON BEAMS; ENERGY RECOVERY; GRAIN BOUNDARIES; INTERSTITIALS; IRRADIATION; MATERIALS RECOVERY; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL CALCULATIONS; VACANCIES