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Title: Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4] ; ;  [1] ;  [5]
  1. Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany)
  2. (Russian Federation)
  3. Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany)
  4. (Saale) (Germany)
  5. ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)
Publication Date:
OSTI Identifier:
22122818
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALLOYS; ENERGY GAP; ENERGY-LEVEL TRANSITIONS; GERMANIUM; GERMANIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; TIN COMPOUNDS