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Title: Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N{sub A}-N{sub D} as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N{sub A}. These experimental observations highlight an isolated acceptor binding energy of 245{+-}25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 10{sup 19} cm{sup -3}.
Authors:
; ; ; ; ;  [1]
  1. CNRS-CRHEA, Rue Bernard Gregory, F-06560 Valbonne (France)
Publication Date:
OSTI Identifier:
22122816
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BINDING ENERGY; CAPACITANCE; CONCENTRATION RATIO; DENSITY; EFFICIENCY; GALLIUM NITRIDES; HALL EFFECT; HOLES; ION MICROPROBE ANALYSIS; IONIZATION; LAYERS; MAGNESIUM ADDITIONS; MASS SPECTRA; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K