Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4813598· OSTI ID:22122816

Brochen, Stephane; Brault, Julien; Chenot, Sebastien; Dussaigne, Amelie; Leroux, Mathieu; Damilano, Benjamin ^[1]

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1. CNRS-CRHEA, Rue Bernard Gregory, F-06560 Valbonne (France)

Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N{sub A}-N{sub D} as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N{sub A}. These experimental observations highlight an isolated acceptor binding energy of 245{+-}25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 10{sup 19} cm{sup -3}.

• OSTI ID: 22122816
• Journal Information: Applied Physics Letters, Vol. 103, Issue 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BINDING ENERGY
CAPACITANCE
CONCENTRATION RATIO
DENSITY
EFFICIENCY
GALLIUM NITRIDES
HALL EFFECT
HOLES
ION MICROPROBE ANALYSIS
IONIZATION
LAYERS
MAGNESIUM ADDITIONS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K