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Title: The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy

Cubic Zn{sub 1-x}Mg{sub x}O thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate and applied Radio-Frequency (RF) plasma power were varied to investigate the impact on film growth and optoelectronic device performance. Solar-blind and visible-blind detectors were fabricated with metal-semiconductor-metal interdigitated Ni/Mg/Au contacts and responsivity is compared under different growth conditions. Increasing oxygen flow rate and RF plasma power increased Zn incorporation in the film, which leads to phase segregation at relatively high Zn/Mg ratio. Responsivity as high as 61 A/W was measured in phase-segregated ZnMgO visible-blind detectors.
Authors:
; ;  [1]
  1. CREOL, College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816-2700 (United States)
Publication Date:
OSTI Identifier:
22122813
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; FLOW RATE; GOLD; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NICKEL; OXYGEN COMPOUNDS; PHOTODETECTORS; PLASMA; RADIOWAVE RADIATION; SEGREGATION; SEMICONDUCTOR MATERIALS; SENSORS; THIN FILMS; ULTRAVIOLET RADIATION; ZINC COMPOUNDS