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Title: Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO{sub 3} thin films

Ag nanoparticle (NP) embedded BaTiO{sub 3} (BTO) thin films on SrRuO{sub 3}-coated SrTiO{sub 3} (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10{sup 4}, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Applied Physics, Hong Kong Polytechnic University (Shenzhen Research Institute) (Hong Kong)
  2. Department of Applied Physics, The Hong Kong Polytechnic University (Shenzhen Research Institute) (Hong Kong)
  3. (China)
  4. Institute for Advanced Materials, South China Normal University, Guangzhou (China)
Publication Date:
OSTI Identifier:
22122811
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; COMPOSITE MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; FILAMENTS; LASER RADIATION; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PULSED IRRADIATION; RANDOMNESS; SILVER; STRONTIUM TITANATES; SUBSTRATES; SWITCHES; THIN FILMS; TITANATES