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Title: Quasi-zero lattice mismatch and band alignment of BaTiO{sub 3} on epitaxial (110)Ge

Growth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO{sub 3} on epitaxial molecular beam epitaxy grown (110)Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO{sub 3} on (110)Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO{sub 3} layer as well as shows a sharp heterointerface between BaTiO{sub 3} and Ge with no traceable interfacial layer. The valence band offset, {Delta}E{sub v}, of 1.99 {+-} 0.05 eV at the BaTiO{sub 3}/(110)Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, {Delta}E{sub c}, of 1.14 {+-} 0.1 eV is calculated using the bandgap energies of BaTiO{sub 3} of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO{sub 3}/(110)Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application.
Authors:
; ;  [1] ; ; ;  [2]
  1. Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
  2. Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22122804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; BARIUM COMPOUNDS; CRYSTAL DEFECTS; ELECTRON MOBILITY; ENERGY BEAM DEPOSITION; ENERGY GAP; FIELD EFFECT TRANSISTORS; INTERFACES; LASER RADIATION; LAYERS; MOLECULAR BEAM EPITAXY; PULSED IRRADIATION; PULSES; RESOLUTION; SEMICONDUCTOR MATERIALS; TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY