skip to main content

Title: Surface morphology evolution of m-plane (1100) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature

We present a systematic study of morphology evolution of [1100] m-plane GaN grown by plasma-assisted molecular beam epitaxy on free-standing m-plane substrates with small miscut angles towards the -c [0001] and +c [0001] directions under various gallium to nitrogen (Ga/N) ratios at substrate temperatures T = 720 Degree-Sign C and T = 740 Degree-Sign C. The miscut direction, Ga/N ratio, and growth temperature are all shown to have a dramatic impact on morphology. The observed dependence on miscut direction supports the notion of strong anisotropy in the gallium adatom diffusion barrier and growth kinetics. We demonstrate that precise control of Ga/N ratio and substrate temperature yields atomically smooth morphology on substrates oriented towards +c [0001] as well as the more commonly studied -c [0001] miscut substrates.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
  3. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22122802
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; CONCENTRATION RATIO; EVOLUTION; GALLIUM; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES