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Title: Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing

We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.
Authors:
;  [1]
  1. College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China)
Publication Date:
OSTI Identifier:
22122801
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BORON ADDITIONS; DIAMONDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; MASS SPECTRA; NANOSTRUCTURES; PHASE TRANSFORMATIONS; P-TYPE CONDUCTORS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; RESOLUTION; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA