Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing
- College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China)
We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.
- OSTI ID:
- 22122801
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 2; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
BORON ADDITIONS
DIAMONDS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GRAIN BOUNDARIES
MASS SPECTRA
NANOSTRUCTURES
PHASE TRANSFORMATIONS
P-TYPE CONDUCTORS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RESOLUTION
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA