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Title: Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.
Authors:
 [1] ;  [2]
  1. Lipetsk State Pedagogical University (Russian Federation)
  2. Voronezh State University (Russian Federation)
Publication Date:
OSTI Identifier:
22121711
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; DISTRIBUTION; EDDY CURRENTS; ELECTRIC FIELDS; ELECTRONS; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS